| PART |
Description |
Maker |
| AOT10N60 AOTF9608 |
600V, 10A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| AOWF10N60 AOW10N60 |
600V,10A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| 10N60Z |
10A 600V N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES
|
| FCPF400N60 |
N-Channel SuperFETII MOSFET 600V, 10A, 400m
|
Fairchild Semiconductor
|
| STGP10NB60S 6208 |
N-CHANNEL 10A - 600V TO-220 PowerMESH IGBT
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STGP10NB60SD GP10NB60SD |
N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STP12NK60Z |
N-CHANNEL 600V - 0.53Ohm - 10A TO220/TO-220FP ZENER-PROTECTED SUPERMESH™ MOSFET
|
ST Microelectronics, Inc.
|
| STGB10NC60KT4 STGP10NC60K STGD10NC60K STGD10NC60KT |
N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
| STGP10NB60S |
N-Channel 10A-600V- TO-220 PowerMESHTM IGBT(N沟道绝缘栅双极晶体管) N沟道10A 600V的到220 PowerMESHTM IGBT的（不适用沟道绝缘栅双极晶体管
|
STMicroelectronics N.V.
|
| STD11NM60N-1 STP11NM60N STF11NM60N D11NM60N F11NM6 |
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET N沟道600V.37ohm - 10A条至22020FP -像是iPak - DPAK封装第二代MDmesh功率MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
